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  Datasheet File OCR Text:
 MS2212
RF & MICROWAVE TRANSISTORS AVIONICS APPLICATIONS
Features
* * * * * *
960 - 1215 MHz 28 VOLTS INPUT/OUTPUT MATCHING POUT = 15 WATTS GP = 8.1 dB MINIMUM COMMON BASE CONFIGURATION
DESCRIPTION:
The MS2212 is designed for specialized avionics applications, including JTIDS where power is provided under pulse formats utilizing short pulse widths and highburst or overall duty cycles.
ABSOLUTE MAXIMUM RATINGS (Tcase = 25C)
Symbol
PDISS IC VCC TJ TSTG Power Dissipation Device Current Collector - Supply Voltage Junction Temperature Storage Temperature
Parameter
50 1.8 32 250 65 to +200
Value
Unit
W A V C C
Thermal Data
RTH(j-c)
Junction-Case Thermal Resistance
3.0
C/W
12-10-2002
MS2212
ELECTRICAL SPECIFICATIONS (Tcase = 25C) 25
STATIC
Symbol
BVCBO BVEBO
BVCER
Test Conditions
IC = 10 mA IE = 1 mA IC = 10 mA VCE = 28 V VCE = 5V IE = 0 mA IC = 0 mA
Min.
55 3.5 55 ---15
Value Typ.
----------------
Max.
---------2.0 150
Unit
V V V mA ----
ICES hFE
RBE = 10 Ohms
IC = 500 mA
DYNAMIC
Symbol
POUT VC GP Conditions
Test Conditions
f = 960 - 1215 MHz f = 960 - 1215 MHz f = 960 - 1215 MHz PIN = 2.3 W PIN = 2.3 W PIN = 2.3 W
VCC = 28 V VCC = 28 V VCC = 28 V
Min.
15 45 8.1
Value Typ.
17 ---8.9
Max.
----------
Unit
W % dB
Pulse Format: 6.4 ms on 6.6 ms off, repeat for 3.3 ms, then off for 4.5125 ms. Duty Cycle: Burst 49.2%, Overall 20.8%
IMPEDANCE DATA:
FREQUENCY
960 MHz 1090 MHz 1215 MHz
Pin = 2.3 W Vcc = 28V
Zin
5.7 + j4.3 5.8 + j2.5 5.0 + j3.0
Zcl
5.7 - j7.7 4.3 - j6.5 4.0 - j4.8
12-10-2002
MS2212
PACKAGE MECHANICAL DATA
12-10-2002


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